1. 西安理工大学机械与精密仪器工程学院
2. 河南科技大学河南省机械设计及传动系统重点实验室
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李伦, 李淑娟, 汤奥斐, 等. SiC单晶片线锯切割技术研究进展[J]. 机械强度, 2015,37(5):849-856.
LI Lun, LI ShuJuan, TANG AoFei, et al. RESEARCH PROGRESS ON CUTTING TECHNOLOGY OF SIC MONO-CRYSTAL WAFER WITH WIRE SAW[J]. 2015,37(5):849-856.
李伦, 李淑娟, 汤奥斐, 等. SiC单晶片线锯切割技术研究进展[J]. 机械强度, 2015,37(5):849-856. DOI: 10.16579/j.issn.1001.9669.2015.05.004.
LI Lun, LI ShuJuan, TANG AoFei, et al. RESEARCH PROGRESS ON CUTTING TECHNOLOGY OF SIC MONO-CRYSTAL WAFER WITH WIRE SAW[J]. 2015,37(5):849-856. DOI: 10.16579/j.issn.1001.9669.2015.05.004.
单晶碳化硅(Si C)以其独特稳定的物理学特性和半导体特性在集成电路和空间光学等领域得到广泛应用。在Si C单晶片的制造过程中,切割是加工Si C单晶片首要关键的工序,其切割成本占整个晶片加工成本的50%以上。参阅了国内外相关文献资料,研究分析了目前Si C在切割技术尤其是线锯切割Si C技术及线锯切割设备方面的研究现状,对线锯切割Si C技术和设备中存在的问题进行研究分析,提出了Si C单晶片线锯切割技术未来的研究方向。
Having a unique physical characteristics and stable semiconductor properties,silicon carbide( Si C) monocrystal wafer has been widely used in integrated circuits,space optics and other fields.In manufacturing process of Si C monocrystal wafer,cutting is primary key process,which the cutting costs accounts for more than 50% of the whole wafer processing costs.In this paper,the datum and relevant literature of domestic and foreign were reviewed to,the current research status of Si C cutting technology,especially cutting with wire saw,and cutting equipment were studied.Moreover,the existing problems in Si C cut by wire saw and in cutting equipment was analyzed.It is proposed that the future researching direction of Si C wafer cutting technology by wire saw.
SiC单晶片金刚石线锯线锯切割技术研究现状
SiC mono-crystal waferDiamond wire sawCutting technology with wire sawPresent researching status
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