LI Lun, LI ShuJuan, TANG AoFei, et al. RESEARCH PROGRESS ON CUTTING TECHNOLOGY OF SIC MONO-CRYSTAL WAFER WITH WIRE SAW. [J]. 37(5):849-856(2015)
DOI:
LI Lun, LI ShuJuan, TANG AoFei, et al. RESEARCH PROGRESS ON CUTTING TECHNOLOGY OF SIC MONO-CRYSTAL WAFER WITH WIRE SAW. [J]. 37(5):849-856(2015) DOI: 10.16579/j.issn.1001.9669.2015.05.004.
RESEARCH PROGRESS ON CUTTING TECHNOLOGY OF SIC MONO-CRYSTAL WAFER WITH WIRE SAW
Having a unique physical characteristics and stable semiconductor properties,silicon carbide( Si C) monocrystal wafer has been widely used in integrated circuits,space optics and other fields.In manufacturing process of Si C monocrystal wafer,cutting is primary key process,which the cutting costs accounts for more than 50% of the whole wafer processing costs.In this paper,the datum and relevant literature of domestic and foreign were reviewed to,the current research status of Si C cutting technology,especially cutting with wire saw,and cutting equipment were studied.Moreover,the existing problems in Si C cut by wire saw and in cutting equipment was analyzed.It is proposed that the future researching direction of Si C wafer cutting technology by wire saw.
关键词
SiC单晶片金刚石线锯线锯切割技术研究现状
Keywords
SiC mono-crystal waferDiamond wire sawCutting technology with wire sawPresent researching status